Bonding type

Process Description

Process accuracy

Support size

Cavity bonding

By bonding at room temperature and pressure, the cavity bonding process can be achieved, with no voids in the effective area of the chip

Void ratio: ≤ 1%

8 inches/12 inches

Heterogeneous bonding

YCMEC utilizes special processes to solve heterogeneous bonding problems and is suitable for products of different sizes

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2-inch/6-inch/8-inch

Quartz-Si bonding

By preparing an anti reflective film on the surface of quartz and subsequent bonding processes, high transmittance and high-precision bonding of quartz can be achieved

Transmittance rate: ≥ 95%

8 inches

6-inch bonding

Using special fixtures to achieve automatic processing of 6-inch wafers, including surface treatment, 6-inch/8-inch bonding, thinning, ARC, and pad open processes

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6 inches/8 inches

Glass bonding

According to customer requirements, patterns are prepared on the glass surface through special processes, and bonding, thinning, and subsequent pattern production are completed

Bonding accuracy：3σ≤500nm

8 inches

D2W bonding

By utilizing pick-and-place and bonding processes, high-precision Co-D2W bonding has been achieved, improving the utilization rate of die

Final alignment accuracy：3σ≤2um

8 inches